| PART |
Description |
Maker |
| HYB18H512321BF-08_10 HYB18H512321BF HYB18H512321BF |
512-Mbit GDDR3 Graphics RAM
|
Qimonda AG
http://
|
| HYB18H512321BF-08 HYB18H512321BF-10 |
512-Mbit GDDR3 Graphics RAM
|
Qimonda AG
|
| V23814-U1306-M130 V23815-U1306-M130 V23815-U1306-M |
SPECIALTY TELECOM CIRCUIT, XFO72
1.6 Gbit/s Rx Parallel Optical Link (...
1.6 Gbit/s Tx Parallel Optical Link (...
Parallel Optical Link: PAROLI T X AC, 1.6 Gbit/s 并行光链路：帕罗利德克萨斯州交流.6 Gbit / s
|
INFINEON[Infineon Technologies AG]
|
| K4D553238F-JC K4D553238F-JC2A K4D553238F-JC33 K4D5 |
256Mbit GDDR SDRAM 56Mbit GDDR SDRAM内存
; Accuracy: 1%; Current Rating:5A; Current Ratio:100:5 A; Terminal Type:Leaded RoHS Compliant: Yes 56Mbit GDDR SDRAM内存
8M X 32 DDR DRAM, 0.6 ns, PBGA144 FBGA-144
8M X 32 DDR DRAM, 0.6 ns, PBGA144 LEAD FREE, FBGA-144
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
DiCon Fiberoptics, Inc.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| HY5DS113222FM-28 HY5DS113222FM-33 HY5DS113222FM-36 |
GDDR SDRAM - 512Mb
512M(16Mx32) GDDR SDRAM
|
Hynix Semiconductor
|
| NAND01BG-B NAND01GW3B2AN6 NAND01GR3B2AN6 NAND01GR3 |
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
|
| NAND08GW4B2CN6E NAND08G-BXC NAND08GR3B2C NAND08GR3 |
4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories
|
Numonyx B.V
http://
|
| HYB18H256321AF-14 HYB18H256321AFL20 |
8M X 32 SYNCHRONOUS GRAPHICS RAM, 0.25 ns, PBGA136
8M X 32 SYNCHRONOUS GRAPHICS RAM, 0.35 ns, PBGA136
|
INFINEON TECHNOLOGIES AG
|
| IS42G32256-8PQ IS42G32256 IS42G32256-10PQ IS42G322 |
256K X 32 X 2 (16-MBIT) SYNCHRONOUS GRAPHICS RAM
|
Integrated Silicon Solution, Inc
|
| GOB256UV6431-100Q-S GOB256UV6431A-100Q-S |
256K X 64 SYNCHRONOUS GRAPHICS RAM MODULE, 54 ns, DMA144
|
|
| MSM54V25632A |
131,072-Word x 32-Bit x 2-Bank Synchronous Graphics RAM
|
OKI SEMICONDUCTOR CO., LTD.
|
